Structural and electrical characterisation of ion-implanted strained silicon
نویسندگان
چکیده
منابع مشابه
Structural. Electrical and Catalytic Properties of Ion-Implanted Oxides
The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides. PACS: 66.30, 81.40, 81.60, 61.70 Since the introduction of ion implantation as a surface modification technique, the electrical [1, 2], optical [3], magn...
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Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
متن کاملOptical absorption studies of ion implanted and amorphous silicon
A detailed study of the implantation induced damage in Si on sapphire, carried out by optical absorption measurements extending from energies above the band gap down to energies far into the sub gap region of Si, is presented. The changes induced in the optical band gap, band edge slopes and in the sub gap features of the spectra are carefully described. The various stages of formation and quen...
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Samples of thin film (d~40nm) tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc (FCVA), have been implanted with Ga+ at ion energy E = 20 keV and ion doses D=3.1014÷3.1015 cm-2. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edg...
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1 Theoretical Physics Department, University of Torino, Torino, Italy. 2 INFN, Sezione di Torino, Torino, Italy. 3 Department of Energetics, University of Firenze, Firenze, Italy. 4 Experimental Physics Department and NIS Centre of Excellence, University of Torino, Torino, Italy. 5 INFN, Laboratori Nazionali di Legnaro, Legnaro (Padova), Italy. 6 Istituto Nazionale di Ottica, CNR, Arcetri (Fire...
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ژورنال
عنوان ژورنال: Materials Science and Engineering: B
سال: 2008
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2008.09.007